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BCR169S
PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two ( galvanic) internal isolated Transistors with good matching in one package Built in bias resistor (R1=4.7k)
C1 6 B2 5 E2 4
4 5 6

2 1
3
VPS05604
R1 TR1
R1 TR2
1 E1
2 B1
3 C2
EHA07266
Type BCR169S
Maximum Ratings Parameter
Marking WSs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 5 15 100 250 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115 C Junction temperature Storage temperature
mA mW C
Thermal Resistance Junction - soldering point 1) RthJS
140
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Dec-13-2001
BCR169S
Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor R1 Vi(on) Vi(off) VCEsat hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max.
Unit
50 50 5 120 0.4 0.5 3.2
4.7
100 630 0.3 0.8 1.1 6.2
V
nA V
k
AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 150 MHz
1) Pulse test: t < 300s; D < 2%
2
Dec-13-2001
BCR169S
DC Current Gain hFE = f (IC )
Collector-Emitter Saturation Voltage
VCE = 5V (common emitter configuration)
10 3
VCEsat = f (IC), hFE = 20
10 2
-
mA
hFE
10 2
10 1
10 1
IC
10 0 10 0 -1 10
0 1
10
10
mA
10
2
10 -1 0.00
0.10
0.20
0.30
0.40
V
0.55
IC
VCEsat
Input on Voltage Vi(on) = f (IC )
Input off voltage Vi(off) = f (IC)
VCE = 0.3V (common emitter configuration)
10 2
VCE = 5V (common emitter configuration)
10 2
mA
mA
10 1
10 1
IC
IC
10 0 10 -1 -1 10
0 1
10 0
10 -1
10 -2
10
10
V
10
2
10 -3 0
1
2
3
V
5
Vi(on)
Vi(off)
3
Dec-13-2001
BCR169S
Total power dissipation Ptot = f (TS )
300
mW
P tot
200
150
100
50
0 0
20
40
60
80
100
120 C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
Ptotmax / PtotDC
-
10 2
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
4
Dec-13-2001

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